Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

Etch characteristics of magnetic tunnel junction materials using substrate heating in the pulse-biased inductively coupled plasma

Effect of RF pulsing biasing on the etching of magnetic tunnel junction materials using CH3OH.

The magnetic tunnel junction (MTJ)-related materials such as CoFeB, CoPt, MgO, and Ru, and W were etched using CH3OH in a pulse-biased inductively coupled plasma system and the effect of bias pulsing (100% 30% duty percentage) on the etch characteristics of the MTJ-related materials was investigated at the substrate temperature of 200 degrees C. The etch selectivity of MTJ-related materials ove...

Characteristics of III-V Dry Etching In HBr-Based Discharges

Electron cyclotron resonance (ECR) discharges of HBr/Ar, HBr/H2, or HBr/CH4 were used for dry etching of Ga-based (GaAs, GaSb, and A1GaAs) and In-based (InP, InAs, InSb, InGaAs, and InA1As) III-V semiconductors. The effects of variations in pressure (1-20 mTorr), gas composition, and additional RF-induced bias on the sample were examined. At least -100 V of dc bias is required to initiate etchi...

Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma

The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...

Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si=SiGe resonant interband tunnel diodes

The effect and influence of dry plasma etching processes of Si=SiGe using HBr for the formation of diode mesa structures has been investigated to minimise sidewall leakage current. To characterise sidewall damage electrically, Si-based resonant interband tunnel diodes (RITD) were processed and the completed RITDs compared by their peak-to-valley current ratio (PVCR) and valley current density (...